Design and Characteristics of an Etching Field Limiting Ring for 10kV SiC Power Device

Abstract

For ultra-high voltage SiC devices of 10kV and above, the length of conventional FLR even reaches up to millimeters, which impedes the miniaturization and development in ultra-high voltage applications. In this paper, a novel termination structure of the Etching Uniform Field Limiting Ring (EU-FLR) for 10kV SiC power device is proposed and analyzed based on the theory of charge field modulation. The blocking capability achieves at 14.2kV and the EU-FLR exhibits a reduction of more than 30% in size compared with the conventional FLRs. The voltage efficiency factor η1 of EU-FLR is 90% and the area efficiency factor η2 is 17.8V/μm, respectively. The influence of the pivotal structural parameters of EU-FLRs on termination protection efficiency has been analyzed and researched by TCAD Silvaco.