High Voltage Impulse Generator Using HV-IGBTs

Abstract

We are reporting on a High-Voltage Impulse Generator, which consists of a step-up transformer, which is driven by new HV-IGBTs (High-Voltage Isolated Gate Bipolar Transistors). The new HV-IGBTs are individually packaged silicon-dies intended for Pulsed-Power Applications. The silicon dies are normally packaged in large modules for locomotive motor drives and similar traction applications. In our work we used the Powerex QIS4506001 discrete IGBT and the QRS4506001 discrete diode, both with a nominal rating of 4500V/60A, derived from continuous- duty applications. Our experiments have shown that the devices are capable of handling currents in excess of 1 kA during pulsed operation.