Single suspended InGaAs nanowire MOSFETs

Abstract

We report on In_0.85Ga_0.15As NWFETs utilizing a single suspended (above the substrate) selectively grown nanowire as the channel. These devices exhibit g_m = 3.3 mS/μm and subthreshold slope SS = 118 mV/dec, both at V_DS = 0.5 V and L_G = 60 nm. This is the highest reported value of gm for all MOSFETs and HEMTs, as well as a strong combination of on and off performance, with Q = g_m/SS = 28, the highest for non-planar III-V MOSFETs.