Simulation and Fabrication of Photoconductive Antenna on LTG-GaAs for Terahertz Radiation

2016 Asia Communications and Photonics Conference (ACP) Pub Date : 2016-11-02 DOI:10.1364/ACPC.2016.AS2E.4

M. Bashirpour, S. Ghorbani, M. Kolahdouz, M. Neshat, H. Hajhosseini, M. Mansouree, M. Fathipour

引用次数: 2

Abstract

Photoconductive antenna on LTG-GaAs has been simulated and fabricated. Reducing gap size, increasing bias voltage and increasing laser pulse power will increase terahertz field. Narrower laser pulse width results in wider terahertz bandwidth.

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用于太赫兹辐射的LTG-GaAs光导天线的仿真与制作

模拟并制作了LTG-GaAs光导天线。减小间隙尺寸、增大偏置电压和增大激光脉冲功率将增大太赫兹场。较窄的激光脉冲宽度导致较宽的太赫兹带宽。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2016 Asia Communications and Photonics Conference (ACP)

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