RF annealing: A method of removing radiation damage in MIS structures

W.H.-L. Ma, T. Ma
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引用次数: 2

Abstract

A method for the removal of fast surface states, slow states and fixed charge in various MIS structures is described. This radio-frequency (RF) annealing process is done in a 13.56 MHz capacitively-coupled plasma etcher/ stripper. This technique has proven to be more effective than the conventional thermal annealing process, and has been used to successfully eliminate undesirable radiation effects induced by E-beam, electron gun metallization, or reactive ion etching exposure in MIS structures. The temperature during the annealing process is estimated to be less than 340°C. Necessary conditions of the annealing process are detailed, and an annealing mechanism is postulated.
射频退火:一种消除MIS结构辐射损伤的方法
描述了一种去除各种MIS结构中的表面快态、慢态和固定电荷的方法。该射频(RF)退火过程在13.56 MHz电容耦合等离子体蚀刻/剥离器中完成。该技术已被证明比传统的热退火工艺更有效,并已成功地用于消除由电子束、电子枪金属化或反应离子蚀刻暴露在MIS结构中引起的不良辐射效应。退火过程中的温度估计小于340℃。详细介绍了退火过程的必要条件,并假设了退火机理。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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