{"title":"RF annealing: A method of removing radiation damage in MIS structures","authors":"W.H.-L. Ma, T. Ma","doi":"10.1109/IEDM.1977.189190","DOIUrl":null,"url":null,"abstract":"A method for the removal of fast surface states, slow states and fixed charge in various MIS structures is described. This radio-frequency (RF) annealing process is done in a 13.56 MHz capacitively-coupled plasma etcher/ stripper. This technique has proven to be more effective than the conventional thermal annealing process, and has been used to successfully eliminate undesirable radiation effects induced by E-beam, electron gun metallization, or reactive ion etching exposure in MIS structures. The temperature during the annealing process is estimated to be less than 340°C. Necessary conditions of the annealing process are detailed, and an annealing mechanism is postulated.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1977 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1977.189190","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A method for the removal of fast surface states, slow states and fixed charge in various MIS structures is described. This radio-frequency (RF) annealing process is done in a 13.56 MHz capacitively-coupled plasma etcher/ stripper. This technique has proven to be more effective than the conventional thermal annealing process, and has been used to successfully eliminate undesirable radiation effects induced by E-beam, electron gun metallization, or reactive ion etching exposure in MIS structures. The temperature during the annealing process is estimated to be less than 340°C. Necessary conditions of the annealing process are detailed, and an annealing mechanism is postulated.