Comparative Evaluation and Analysis of Packaging Material System and Parallel Package Method Based on Interleaved Planar SiC Power Module

Abstract

Silicon carbide as a representative of the wide band gap semiconductor materials have excellent characteristics, but because the silicon carbide device packaging structure is mostly the same as Si device, and in practical use, Silicon carbide devices often need to withstand higher temperature and more severe mechanical stress, so its reliability is facing severe challenges. Based on the recently proposed interleaved planar packaging structure, this paper simulates the silicon carbide power module packaging material system, and on this basis, further studies the reliability of horizontal and longitudinal parallel power modules.