Relationship between field emission current characteristic and electrical breakdown in vacuum

IEEE 1997 Annual Report Conference on Electrical Insulation and Dielectric Phenomena Pub Date : 1997-10-19 DOI:10.1109/CEIDP.1997.641145

D. Makabe, M. Sone, H. Mitsui, E. Takahashi, A. Ebe, K. Ogata

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引用次数: 3

Abstract

It has been assumed that an electrical breakdown in vacuum is caused by field emission electrons emitted from a cathode surface. And these field emission electrons emitted from microprotrusions on the cathode surface. It has been recognized that this electron's current is expressed by F-N theory. Therefore, it is thought that a characteristic of a field emission current has influence on the electrical breakdown in vacuum. In this study, the electrical breakdown voltage in vacuum gap was measured in order to investigate whether the correlation exists between this voltage and the characteristic of the field emission current. At this time, the field emission current was measured from appearance of electron to just before electrical breakdown in vacuum, by using a Micro Channel Plate (MCP) and a pico-ammeter. As the result, it is guessed that the characteristic of field emission current has influence on the electrical breakdown. Because the applied voltage to keep the same field emission current correlates to the electrical breakdown voltage in all cathodes when the field emission current is near to the electrical breakdown.

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真空场发射电流特性与电击穿的关系

假定真空中的电击穿是由阴极表面发射的场发射电子引起的。这些场发射电子从阴极表面的微突起中发射出来。人们已经认识到，这个电子的电流是用F-N理论来表示的。因此，认为场发射电流的特性对真空中的电击穿有影响。本研究测量了真空间隙的击穿电压，以探讨该电压与场发射电流特性之间是否存在相关性。此时，利用微通道板(MCP)和皮安计在真空中测量了从电子出现到电击穿之前的场发射电流。由此推测，场发射电流的特性对电击穿有影响。因为当场发射电流接近击穿时，保持相同场发射电流的施加电压与所有阴极的击穿电压相关。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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IEEE 1997 Annual Report Conference on Electrical Insulation and Dielectric Phenomena

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