8.5 A 0.42ps-jitter −241.7dB-FOM synthesizable injection-locked PLL with noise-isolation LDO

H. Ngo, K. Nakata, Toru Yoshioka, Y. Terashima, K. Okada, A. Matsuzawa
{"title":"8.5 A 0.42ps-jitter −241.7dB-FOM synthesizable injection-locked PLL with noise-isolation LDO","authors":"H. Ngo, K. Nakata, Toru Yoshioka, Y. Terashima, K. Okada, A. Matsuzawa","doi":"10.1109/ISSCC.2017.7870305","DOIUrl":null,"url":null,"abstract":"This paper presents a supply regulated synthesizable injection-locked PLL (IL-PLL), using a noise-isolation LDO. The noise-isolation LDO realizes a time-shift operation to isolate the PLL from both supply and LDO noise, so the IL-PLL operation remains robust, even within a noisy SoC. The core layout of the PLL is implemented using solely a foundry provided standard-cell library for a 65nm CMOS process with standard digital design tools. Among synthesizable PLLs, jitter performance of 0.42ps is achieved with 3.8mW power consumption at 0.9GHz oscillation.","PeriodicalId":269679,"journal":{"name":"2017 IEEE International Solid-State Circuits Conference (ISSCC)","volume":"129 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"22","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE International Solid-State Circuits Conference (ISSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2017.7870305","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 22

Abstract

This paper presents a supply regulated synthesizable injection-locked PLL (IL-PLL), using a noise-isolation LDO. The noise-isolation LDO realizes a time-shift operation to isolate the PLL from both supply and LDO noise, so the IL-PLL operation remains robust, even within a noisy SoC. The core layout of the PLL is implemented using solely a foundry provided standard-cell library for a 65nm CMOS process with standard digital design tools. Among synthesizable PLLs, jitter performance of 0.42ps is achieved with 3.8mW power consumption at 0.9GHz oscillation.
8.5一个0.42ps- 241.7dB-FOM可合成注入锁相环,具有隔离噪声的LDO
本文提出了一种使用噪声隔离LDO的电源调节可合成注入锁相环(IL-PLL)。噪声隔离LDO实现时移操作,将PLL从电源和LDO噪声中隔离出来,因此即使在有噪声的SoC中,IL-PLL也保持鲁棒性。锁相环的核心布局仅使用代工厂提供的65nm CMOS工艺标准单元库和标准数字设计工具来实现。在可合成锁相环中,在0.9GHz振荡下,以3.8mW的功耗实现0.42ps的抖动性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信