0.15uM Y-Gate pHEMT Process Using Deep-UV Phase-Shift Lithography

2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2011-11-01 DOI:10.1109/CSICS.2011.6062444

Jerry Wang, J. Stanback, K. Fujii

引用次数: 2

Abstract

An AlGaAs/InGaAs pHEMT process employing Deep-UV Phase-Shift lithography to create 0.15uM Y-shape gates has been developed and released to manufacturing. The gate formation process has high throughput and low cost compared to E-beam lithography and excellent process control has been achieved. Typical Fet characteristics are: peak fT=86Ghz, Vp=-1.0V, Gmmax=520mS/mm, Imax=575mA/mm, and BVdg=14 volts. A 9-section traveling wave amplifier (TWA) with 10dB gain up to 88 Ghz has been manufactured in this process.

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0.15uM y栅pHEMT深紫外移相光刻工艺

一种采用深紫外相移光刻技术的AlGaAs/InGaAs pHEMT工艺已经开发并发布了0.15uM y形栅极。与电子束光刻相比，该工艺具有高通量和低成本的优点，并实现了良好的工艺控制。典型的Fet特性是:峰值fT=86Ghz, Vp=-1.0V, Gmmax=520mS/mm, Imax=575mA/mm, BVdg=14伏。用此工艺制造出增益10dB、工作频率高达88ghz的9段行波放大器(TWA)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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