GaAs MMIC Power FET Amplifiers at K-Band

1987 17th European Microwave Conference Pub Date : 1987-10-01 DOI:10.1109/EUMA.1987.333634

H.-L.A. Hung, A. Ezzeddine, F. Phelleps, J. Bass, H. Huang

引用次数: 5

Abstract

K-band monolithic power GaAs FET amplifier modules have been developed. These single-ended modules provide a linear gain of 4.5 dB and out-put power of 27 dBm in the 17.7- to 20.5-GHz band. At 19 GHz, a balanced module has achieved an output power of up to 1.5 W (0.52 W/mm), while a cascaded multistage amplifier has demonstrated a linear power gain of 26.2 dB and output power of 1.33 W. These 1.7- × 1.8-mm MMICs include DC-blocking capacitors and bias networks.

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k波段GaAs MMIC功率场效应管放大器

研制了k波段单片功率GaAs FET放大器模块。这些单端模块在17.7- 20.5 ghz频段提供4.5 dB的线性增益和27 dBm的输出功率。在19 GHz时，平衡模块的输出功率高达1.5 W (0.52 W/mm)，而级联多级放大器的线性功率增益为26.2 dB，输出功率为1.33 W。这些1.7 × 1.8毫米mmic包括直流阻塞电容器和偏置网络。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1987 17th European Microwave Conference

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