{"title":"Memristor-based timing circuit","authors":"S. Yener, R. Mutlu, T. Yener, H. Kuntman","doi":"10.1109/EBBT.2017.7956776","DOIUrl":null,"url":null,"abstract":"Memristor has been proposed as the fourth missing fundamental circuit element in 1971. This new circuit element has a charge controlled resistance, saturation mechanism and zero-crossing hysteresis loop which cannot be mimicked by previously known circuit elements. It is a promising candidate for both digital and analog electric circuit applications. In this work, a memristor based timer circuit is proposed. Concept of the circuit is presented and its analysis is done. Simulation of the timer is done using the linear drift model of the TiO2 memristor and the result is compared to the analytical calculations.","PeriodicalId":293165,"journal":{"name":"2017 Electric Electronics, Computer Science, Biomedical Engineerings' Meeting (EBBT)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Electric Electronics, Computer Science, Biomedical Engineerings' Meeting (EBBT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EBBT.2017.7956776","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
Memristor has been proposed as the fourth missing fundamental circuit element in 1971. This new circuit element has a charge controlled resistance, saturation mechanism and zero-crossing hysteresis loop which cannot be mimicked by previously known circuit elements. It is a promising candidate for both digital and analog electric circuit applications. In this work, a memristor based timer circuit is proposed. Concept of the circuit is presented and its analysis is done. Simulation of the timer is done using the linear drift model of the TiO2 memristor and the result is compared to the analytical calculations.