MRAM DTCO and Compact Models

Jeehwan Song, Jianping Wang, C. Kim
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引用次数: 2

Abstract

Design-Technology Co-Optimization (DTCO) has become an important design methodology for making early decisions on technology, circuit, and system design parameters. This invited paper introduces various aspects of DTCO for MRAM development, ranging from SPICE compatible Magnetic Tunnel Junction (MTJ) device models, array level spin transfer torque magnetoresistive random access memory (STT-MRAM) power-performance-area (PPA) evaluation, scalability and variability studies of large-scale arrays, and novel read and write circuit techniques.
MRAM DTCO和紧凑型车型
设计技术协同优化(DTCO)已成为一种重要的设计方法,用于对技术、电路和系统设计参数进行早期决策。这篇特邀论文介绍了用于MRAM开发的DTCO的各个方面,包括SPICE兼容磁隧道结(MTJ)器件模型,阵列级自旋转移扭矩磁阻随机存取存储器(STT-MRAM)功率性能面积(PPA)评估,大规模阵列的可扩展性和可变性研究,以及新颖的读写电路技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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