Spontaneous current and voltage generation in gated quantum dot structures

Abstract

Theoretical results are presented on the electronic transport in the open zero-dimensional nanostructure, or a nanotransistor, in which we demonstrate the manifestation of the effect of the upconversion of the electronic energy level occupation. The self-consistent Born approximation is used to the electron-phonon interaction in a quantum dot. The well-known simple Toy Model of Supprio Datta is used for the description of a nanotransistor. We show that in an asymmetric nanodevice one can obtain a spontaneous potential step generation between the electric contacts of such a device. This will be documented numerically on a nanotransistor model in which the active region of the nanotransistor is a quantum dot having two electronic bound states. The effect can be important for the information processing using nanostructures.