Total ionizing dose analysis of a native detector and a satellite on orbit

B. Kocaman, Murat Harmandali, Mehmet Kopru, Bekir Solak, T. Ergin, E. Yılmaz, Eylem Guven
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引用次数: 1

Abstract

Simulation studies were performed to estimate the Total Ionizing Dose (TID) on the radiation detector (MURaD) designed by TUBITAK UZAY. MURaD contains 3 sensors. NurFET is the first sensor on MURaD and it is a p-channel MOSFET manufactured by the Nuclear Radiation Detectors Application and Research Center (NURDAM-Turkey). The second sensor is RADFET VT01 and it is a p-channel MOSFET manufactured by Varadis (Ireland). The third sensor of MURaD is Floating Gate Dosimeter (FGDOS) manufactured by IC-Malaga. This study presents the first TID analysis results to be utilized in the design phase. In this study, TID levels for different shielding materials and different thicknesses were calculated for a satellite orbiting at an altitude of 800km. Polymethyl methacrylate (PMMA), SiO2 (α−quartz), Aluminum (Al), and Lead (Pb) were chosen as shielding materials. For each shielding material, TID levels were calculated with FASTRAD software for corresponding thicknesses, i.e. 0.5, 1, 2, 3, 4, and 5 mm. Thirteen (13) Silicon (Si) point detectors were created for conceptual CubeSat (3U class), and TID levels were observed for each point detector. These detectors are located and defined such that each inner and outer face of the geometry includes one (1) point detector. In addition, one (1) point detector is located at the center of the CubeSat.Simulation studies were performed to estimate the Total Ionizing Dose (TID) on the radiation detector (MURaD) designed by TUBITAK UZAY. MURaD contains 3 sensors. NurFET is the first sensor on MURaD and it is a p-channel MOSFET manufactured by the Nuclear Radiation Detectors Application and Research Center (NURDAM-Turkey). The second sensor is RADFET VT01 and it is a p-channel MOSFET manufactured by Varadis (Ireland). The third sensor of MURaD is Floating Gate Dosimeter (FGDOS) manufactured by IC-Malaga. This study presents the first TID analysis results to be utilized in the design phase. In this study, TID levels for different shielding materials and different thicknesses were calculated for a satellite orbiting at an altitude of 800km. Polymethyl methacrylate (PMMA), SiO2 (α−quartz), Aluminum (Al), and Lead (Pb) were chosen as shielding materials. For each shielding material, TID levels were calculated with FASTRAD software for corresponding thicknesses, i.e. 0.5, 1, 2, 3, 4, and 5 mm. Thirteen (13) Sil...
本地探测器和在轨卫星的总电离剂量分析
对TUBITAK UZAY设计的辐射探测器(MURaD)的总电离剂量(TID)进行了模拟研究。MURaD包含3个传感器。NurFET是MURaD上的第一个传感器,它是由核辐射探测器应用与研究中心(NURDAM-Turkey)制造的p通道MOSFET。第二个传感器是RADFET VT01,它是由Varadis(爱尔兰)制造的p沟道MOSFET。MURaD的第三个传感器是ic -马拉加公司生产的浮门剂量计(FGDOS)。本研究提出了第一个用于设计阶段的TID分析结果。本研究计算了一颗轨道高度为800km的卫星在不同屏蔽材料和不同厚度下的TID水平。选择聚甲基丙烯酸甲酯(PMMA)、SiO2 (α−石英)、铝(Al)和铅(Pb)作为屏蔽材料。对于每种屏蔽材料,用FASTRAD软件计算相应厚度的TID水平,即0.5、1、2、3、4、5 mm。为概念CubeSat (3U类)创建了13个硅(Si)点探测器,并观察了每个点探测器的TID水平。这些检测器的定位和定义使得几何图形的每个内外表面包括一(1)个点检测器。此外,一个(1)点探测器位于立方体卫星的中心。对TUBITAK UZAY设计的辐射探测器(MURaD)的总电离剂量(TID)进行了模拟研究。MURaD包含3个传感器。NurFET是MURaD上的第一个传感器,它是由核辐射探测器应用与研究中心(NURDAM-Turkey)制造的p通道MOSFET。第二个传感器是RADFET VT01,它是由Varadis(爱尔兰)制造的p沟道MOSFET。MURaD的第三个传感器是ic -马拉加公司生产的浮门剂量计(FGDOS)。本研究提出了第一个用于设计阶段的TID分析结果。本研究计算了一颗轨道高度为800km的卫星在不同屏蔽材料和不同厚度下的TID水平。选择聚甲基丙烯酸甲酯(PMMA)、SiO2 (α−石英)、铝(Al)和铅(Pb)作为屏蔽材料。对于每种屏蔽材料,用FASTRAD软件计算相应厚度的TID水平,即0.5、1、2、3、4、5 mm。十三(13)仍然……
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