Architecting HBM as a high bandwidth, high capacity, self-managed last-level cache

Tyler Stocksdale, Mu-Tien Chang, Hongzhong Zheng, F. Mueller
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引用次数: 2

Abstract

Due to the recent growth in the number of on-chip cores available in today's multi-core processors, there is an increased demand for memory bandwidth and capacity. However, off-chip DRAM is not scaling at the rate necessary for the growth in number of on-chip cores. Stacked DRAM last-level caches have been proposed to alleviate these bandwidth constraints, however, many of these ideas are not practical for real systems, or may not take advantage of the features available in today's stacked DRAM variants. In this paper, we design a last-level, stacked DRAM cache that is practical for real-world systems and takes advantage of High Bandwidth Memory (HBM) [1]. Our HBM cache only requires one minor change to existing memory controllers to support communication. It uses HBM's built-in logic die to handle tag storage and lookups. We also introduce novel tag/data storage that enables faster lookups, associativity, and more capacity than previous designs.
将HBM架构为高带宽、高容量、自我管理的最后一级缓存
由于当今多核处理器中可用的片上内核数量最近有所增长,因此对内存带宽和容量的需求也在增加。然而,片外DRAM的扩展速度不能满足片内内核数量增长的需要。为了缓解这些带宽限制,已经提出了堆叠DRAM最后一级缓存,然而,其中许多想法对于实际系统并不实用,或者可能无法利用当今堆叠DRAM变体中可用的功能。在本文中,我们设计了一个最后一级的堆叠DRAM缓存,它适用于现实世界的系统,并利用了高带宽内存(HBM)[1]。我们的HBM缓存只需要对现有的内存控制器做一个小的改变来支持通信。它使用HBM的内置逻辑芯片来处理标记存储和查找。我们还引入了新的标签/数据存储,与以前的设计相比,它支持更快的查找、关联性和更大的容量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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