A Negative-Bias-Temperature-Instability Study on Omega-Gate Silicon Nanowire SOI pMOSFETs

Abstract

The Negative-Bias-Temperature-Instability (NBTI) is an important reliability parameter for advanced technology nodes. This work presents an experimental study of NBTI in omega-gate nanowire (NW) pMOSFET. The 3D-numerical simulations were performed in order to better understand the NBTI effect in NW transistors. The results shows that NBTI in NW is high ($\Delta$ V $\approx200 -300$mV – for W = 10nm) due to the higher gate oxide electric field accelerating the NBTI effect providing a higher degradation. This study was performed for different channel widths and lengths.