An accurate non-quasistatic MOSFET model for simulation of RF and high speed circuits

Abstract

An accurate Non-Quasistatic SPICE model based on relaxation time is proposed for ac and transient simulation of high speed and radio frequency (RF) circuits. A method for extracting the relaxation time is also provided. Its dependence on Vgs and Vds and channel length is based on physics and built in the model. Finally the model is verified with both 2D simulation and measurement.