GaAs monolithic components development for Q-band phased array application

Abstract

Major components for monolithic Q-band phased-array applications have been developed using 0.2 mu m doped channel pseudomorphic InGaAs/GaAs high electron mobility transistor (HEMT) technology. The components include a high-gain, high-efficiency monolithic amplifier and a 3-bit switched line, monolithic phase shifter. At 44 GHz, measurement results of the amplifier demonstrated a small signal gain of 19.5 dB, and a power added efficiency of 20% at 3-dB compression point with an output power of 9 mW. The phase shifter had a measured insertion loss of 7.5 dB and a phase error smaller than 7 degrees from 43 to 45 GHz for all phase states. These components are suitable for monolithic integrated phased-array transmitter applications.<>