Riddle and Bond Silicon on Insulator (RABSOI)

Abstract

In this paper, a novel method for creation of Partial Silicon on Insulator (PSOI) substrate is divulged. The PSOI substrate may be thereafter utilized as a starting material for power integrated technologies where both dielectrically isolated devices as well as backside electrically and / or thermally connected devices are required on the same die. Disclosed method relies predominantly on standard manufacturing process steps utilized for regular SOI production such as wafer bonding, grinding and polishing.