{"title":"PbS-Si anisotype heterojunction characteristics","authors":"A. Steckl, H. Elabd, T. Jakobus","doi":"10.1109/IEDM.1977.189316","DOIUrl":null,"url":null,"abstract":"The operation of p-n PbS-Si heterojunction devices at 200 K and 300 K is reported. The I-V and C-V characteristics are presented and compared to those of p-p heterojunctions. At 200 K and a wavelength of 2.7 µm, the open circuit detectivity and voltage responsivity achieved are D<sup>*</sup><inf>λ</inf>(100 Hz, 1 Hz) = 4 × 10<sup>9</sup>cm Hz<sup>1/2</sup>/W and R<inf>V, λ</inf>(100 Hz) = 4 × 10<sup>3</sup>V/W. Under the same conditions but in short circuit, zero bias operation, the detector performance achieved is, D<sup>*</sup><inf>λ</inf>(100 Hz, 1 Hz = 3.4 × 10<sup>9</sup>cm Hz<sup>1/2</sup>/W and R<inf>I, λ</inf>, = 4.8 × 10<sup>-4</sup>A/W.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1977 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1977.189316","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The operation of p-n PbS-Si heterojunction devices at 200 K and 300 K is reported. The I-V and C-V characteristics are presented and compared to those of p-p heterojunctions. At 200 K and a wavelength of 2.7 µm, the open circuit detectivity and voltage responsivity achieved are D*λ(100 Hz, 1 Hz) = 4 × 109cm Hz1/2/W and RV, λ(100 Hz) = 4 × 103V/W. Under the same conditions but in short circuit, zero bias operation, the detector performance achieved is, D*λ(100 Hz, 1 Hz = 3.4 × 109cm Hz1/2/W and RI, λ, = 4.8 × 10-4A/W.
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