An analytical model for the insulated-gate bipolar transistor under all free-carrier injection conditions

Y. Yue, J. Liou, I. Batarseh
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Abstract

The insulated-gate bipolar transistor (IGBT) is the most advanced and promising power switching device. This paper presents an analytical model for the current-voltage characteristics of such a device. The model is derived rigorously from the ambipolar transport equation and is valid for all free-carrier injection conditions, rather than just for a special case (i.e., low or high free-carrier injection) considered in the IGBT models reported to date in the literature. Results simulated from a two-dimensional device simulator called MEDICI are also included in support of the model.
所有自由载流子注入条件下的绝缘栅双极晶体管的解析模型
绝缘栅双极晶体管(IGBT)是目前最先进、最有发展前途的功率开关器件。本文提出了这种器件的电流-电压特性的解析模型。该模型严格推导自双极性输运方程,适用于所有自由载流子注入条件,而不仅仅适用于迄今为止文献中报道的IGBT模型中考虑的特殊情况(即低或高自由载流子注入)。在一个叫做MEDICI的二维设备模拟器上模拟的结果也包括在支持模型中。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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