An analytical model for the insulated-gate bipolar transistor under all free-carrier injection conditions

Abstract

The insulated-gate bipolar transistor (IGBT) is the most advanced and promising power switching device. This paper presents an analytical model for the current-voltage characteristics of such a device. The model is derived rigorously from the ambipolar transport equation and is valid for all free-carrier injection conditions, rather than just for a special case (i.e., low or high free-carrier injection) considered in the IGBT models reported to date in the literature. Results simulated from a two-dimensional device simulator called MEDICI are also included in support of the model.