Titanium - carbon multilayer nanostructures obtained by thermionic vacuum arc method

TURKISH PHYSICAL SOCIETY 35TH INTERNATIONAL PHYSICS CONGRESS (TPS35) Pub Date : 2019-11-25 DOI:10.1063/1.5135433

V. Ciupină, C. Lungu, E. Vasile, G. Prodan, C. Porosnicu, R. Vlǎdoiu, A. Mandeş, V. Dinca, V. Nicolescu, M. Prodan, R. Manu

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引用次数: 2

Abstract

Titanium-Carbon (Ti-C) multilayer nanostructures were deposed by Thermionic Vacuum Arc (TVA) technology. The layers consisting of about 100 nm Carbon base layer and seven 40 nm alternatively Ti and C layers were deposed on Silicon substrates. The thickness of such a multilayer structure was up to 500 nm. On the other hand, in order to obtain Ti-C multilayer structures with various Ti content, a 20nm thick C layer was first deposed on Si substrate and then seven successively Ti-C layers (Ti and C simultaneously deposed), each of these having a thickness of up to 40 nm were deposed. To perform the successively Ti-C layers with various Ti content were changed the discharge parameters for C and Ti plasma sources to obtain the desirable Ti atomic concentration To characterize microstructure properties of as prepared C-Ti multilayer structures were used Rutherford Backscattering Spectrometry (RBS), Electron microscopy techniques (TEM, STEM), Raman Spectroscopy and electrical measurements.Titanium-Carbon (Ti-C) multilayer nanostructures were deposed by Thermionic Vacuum Arc (TVA) technology. The layers consisting of about 100 nm Carbon base layer and seven 40 nm alternatively Ti and C layers were deposed on Silicon substrates. The thickness of such a multilayer structure was up to 500 nm. On the other hand, in order to obtain Ti-C multilayer structures with various Ti content, a 20nm thick C layer was first deposed on Si substrate and then seven successively Ti-C layers (Ti and C simultaneously deposed), each of these having a thickness of up to 40 nm were deposed. To perform the successively Ti-C layers with various Ti content were changed the discharge parameters for C and Ti plasma sources to obtain the desirable Ti atomic concentration To characterize microstructure properties of as prepared C-Ti multilayer structures were used Rutherford Backscattering Spectrometry (RBS), Electron microscopy techniques (TEM, STEM), Raman Spectroscopy and electrical measurements.

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热离子真空电弧法制备钛碳多层纳米结构

采用热离子真空电弧(TVA)技术沉积钛碳(Ti-C)多层纳米结构。在硅衬底上沉积了约100 nm的碳基层和7个40 nm的Ti和C交替层。该多层结构的厚度可达500 nm。另一方面，为了获得不同Ti含量的Ti-C多层结构，首先在Si衬底上沉积20nm厚的C层，然后连续沉积7层Ti-C层(Ti和C同时沉积)，每层厚度可达40nm。为了连续制备不同Ti含量的Ti-C层，改变了C和Ti等离子体源的放电参数，以获得所需的Ti原子浓度。采用卢瑟福后向散射光谱(RBS)、电子显微镜技术(TEM、STEM)、拉曼光谱和电学测量等方法表征了制备的C-Ti多层结构的微观结构特性。采用热离子真空电弧(TVA)技术沉积钛碳(Ti-C)多层纳米结构。在硅衬底上沉积了约100 nm的碳基层和7个40 nm的Ti和C交替层。该多层结构的厚度可达500 nm。另一方面，为了获得不同Ti含量的Ti-C多层结构，首先在Si衬底上沉积20nm厚的C层，然后连续沉积7层Ti-C层(Ti和C同时沉积)，每层厚度可达40nm。为了连续制备不同Ti含量的Ti-C层，改变了C和Ti等离子体源的放电参数，以获得所需的Ti原子浓度。采用卢瑟福后向散射光谱(RBS)、电子显微镜技术(TEM、STEM)、拉曼光谱和电学测量等方法表征了制备的C-Ti多层结构的微观结构特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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TURKISH PHYSICAL SOCIETY 35TH INTERNATIONAL PHYSICS CONGRESS (TPS35)

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