Semiconductor solid solutions Hg1-xMnxTe -based Schottky diodes for the mid infrared radiation

Abstract

The electric and photoelectric parameters of the semiconductor solid solutions Hg1-xMnxTe-based Shottky diodes are presented in this paper. It is showing that the aforementioned diodes are the sensitive ones at lower frequencies of the infrared radiation in comparison with the InSb-based photodiodes and demonstrate the significant improvement of the crystal structure perfection in comparison with the Hg1-xCdxTe-based photodiodes.