Processor and DRAM integration by TSV-based 3-D stacking for power-aware SOCs

Shin-Shiun Chen, Chun-Kai Hsu, Hsiu-Chuan Shih, J. Yeh, Cheng-Wen Wu
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引用次数: 3

Abstract

With the rapid popularization of mobile devices, the low-power and energy-efficient became far more important than the system operating frequency. This work demonstrates a processor and DRAM integration scheme by TSV-based 3-D stacking and the performance and energy efficiency is evaluated by an ESL design methodology. The integration scheme comprising Sans-Cache DRAM (SCDRAM) architecture which is designed under the power and energy considerations is explored. Experiment results show the proposed architecture can greatly reduce 80% energy while having 23.5% of system performance improvement.
基于tsv3 - d堆叠的功耗感知soc处理器与DRAM集成
随着移动设备的快速普及,低功耗和节能远比系统工作频率更重要。本工作展示了一种基于tsv的3-D堆叠处理器和DRAM集成方案,并通过ESL设计方法评估了性能和能效。探讨了无缓存DRAM (SCDRAM)架构的集成方案,该架构是在功耗和能量考虑下设计的。实验结果表明,该架构可大大降低80%的能耗,同时提高23.5%的系统性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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