A new method to design piezoelectric transformer used in MOSFET and IGBT gate drive circuits

D. Vasić, F. Costa, E. Sarraute
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引用次数: 8

Abstract

This paper is situated in the continuity of our works focused on the use of piezoelectric transformer (PT) in MOSFET/IGBT gate drives. In this paper, a new design method for a gate drive PT is presented. We have previously demonstrated that this kind of transformer can be successfully used in insulated MOSFETs/IGBT's gate drive circuits. An optimized multi-layered PT working in the second thickness mode has been studied for transmitting signal and energy in a gate drive circuit. Based on an analytical Mason model, the design method gives the minimal size of the multi-layer PT. Thickness of the PT is given by its mechanical resonance frequency and by maximum electrical field in the material. This method takes into account mechanical losses and heating of the piezoelectric material. Area of the PT is calculated considering the required secondary power P/sub 2/ and heating of the material. This analytical design method can be extended to predict the characteristics of the PT: gain, transmitted power, efficiency and heating of piezoelectric materials according to load resistance. A prototype of a PT based on this design process was fabricated and tested experimentally. Piezoelectric material used for primary and secondary layers is lead titanate, PbTiO/sub 3/, polarized along the thickness. Insulation between the primary and the secondary is achieved by a 300 /spl mu/m thickness layer of alumina, Al/sub 2/O/sub 3/. All calculated characteristics have been confirmed by measurements.
一种用于MOSFET和IGBT栅极驱动电路的压电变压器设计新方法
本文是我们的工作的延续,重点是在MOSFET/IGBT栅极驱动器中使用压电变压器(PT)。本文提出了一种新的栅极驱动PT的设计方法。我们之前已经证明,这种变压器可以成功地用于绝缘mosfet /IGBT的栅极驱动电路。研究了一种工作在二厚度模式下的优化多层PT在栅极驱动电路中传输信号和能量。该设计方法基于解析梅森模型,给出了多层PT的最小尺寸,PT的厚度由其机械共振频率和材料中的最大电场决定。该方法考虑了压电材料的机械损耗和加热。PT的面积是考虑所需的二次功率P/sub /和材料的加热来计算的。这种分析设计方法可以推广到根据负载电阻预测压电材料的增益、传输功率、效率和发热等特性。在此基础上,制作了一个PT样机并进行了实验测试。初级和次级层采用的压电材料是沿厚度极化的钛酸铅,PbTiO/sub 3/。初级和次级之间的绝缘是通过300 /spl mu/m厚度的氧化铝层,Al/sub 2/O/sub 3/来实现的。所有计算的特性都通过测量得到了证实。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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