Strain-balanced quantum wells for power FET applications

Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95 Pub Date : 1995-11-27 DOI:10.1109/EDMO.1995.493687

J.J. Harris, J. M. Roberts, R. Jaszek, M. Hopkinson

{"title":"Strain-balanced quantum wells for power FET applications","authors":"J.J. Harris, J. M. Roberts, R. Jaszek, M. Hopkinson","doi":"10.1109/EDMO.1995.493687","DOIUrl":null,"url":null,"abstract":"We report the use of strain-balanced quantum well structures to generate high carrier density, high mobility layers suitable for power FET applications. Current designs of modulation-doped heterojunctions (i.e. HEMTs) have a sheet carrier density limited to a maximum of /spl sim/3/spl times/10/sup 12/ cm/sup -2/, while doped channel devices (HFETs) allow higher densities, but with degraded mobility. We have investigated two techniques for giving improved properties, (a) strain-balanced AlAs/InAs/AlAs HEMTs grown on InP, where sheet densities of /spl sim/10/sup 13/ cm/sup -2/ have been generated, although with some evidence of mobility degradation, and (b) delta-doped, compositionally graded HFETs, again strain-balanced on InP, where excellent mobilities and saturation drift velocities have been obtained for sheet densities of 4-5/spl times/10/sup 12/ cm/sup -2/. This paper describes the growth techniques used to produce these samples, and presents the X-ray diffraction data and electrical properties of the layers.","PeriodicalId":431745,"journal":{"name":"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDMO.1995.493687","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

Abstract

We report the use of strain-balanced quantum well structures to generate high carrier density, high mobility layers suitable for power FET applications. Current designs of modulation-doped heterojunctions (i.e. HEMTs) have a sheet carrier density limited to a maximum of /spl sim/3/spl times/10/sup 12/ cm/sup -2/, while doped channel devices (HFETs) allow higher densities, but with degraded mobility. We have investigated two techniques for giving improved properties, (a) strain-balanced AlAs/InAs/AlAs HEMTs grown on InP, where sheet densities of /spl sim/10/sup 13/ cm/sup -2/ have been generated, although with some evidence of mobility degradation, and (b) delta-doped, compositionally graded HFETs, again strain-balanced on InP, where excellent mobilities and saturation drift velocities have been obtained for sheet densities of 4-5/spl times/10/sup 12/ cm/sup -2/. This paper describes the growth techniques used to produce these samples, and presents the X-ray diffraction data and electrical properties of the layers.

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用于功率场效应管的应变平衡量子阱

我们报告了使用应变平衡量子阱结构来产生适合功率场效应晶体管应用的高载流子密度、高迁移率层。目前设计的调制掺杂异质结(即hemt)的载流子密度限制在最大/spl sim/3/spl乘以/10/sup 12/ cm/sup -2/，而掺杂通道器件(hfet)允许更高的密度，但迁移率降低。我们已经研究了两种改善性能的技术，(a)在InP上生长的应变平衡的AlAs/InAs/AlAs hemt，虽然有迁移率下降的证据，但已经产生了/spl sim/10/sup 13/ cm/sup -2/的片密度，以及(b) δ掺杂的，成分梯度的hfet，再次在InP上应变平衡，在4-5/spl倍/10/sup 12/ cm/sup -2/的片密度下获得了优异的迁移率和饱和漂移速度。本文介绍了用于生产这些样品的生长技术，并给出了x射线衍射数据和层的电学性质。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95

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