Improvement of InAlAs/InP heterointerface grown by MOVPE by using thin AlP layer

Abstract

InAlAs/InP selectively doped heterostructures have great potential for microwave and millimeter-wave power device applications. InAlAs/InP HEMTs have a higher breakdown voltage and lower output conductance than InAlAs/InGaAs HEMTs. Few studies have been reported on InAlAs/InP selectively doped heterostructures, however, because it is difficult to grow high-quality interfaces between the InAlAs and InP layers. Brasil et al. (1991, 1992) reported the interface characteristics of gas-source MBE-grown InAlAs/InP heterostructures using photoluminescence (PL) measurement. In this paper, we investigate the interface characteristics of InAlAs/InP heterostructures grown by reduced-pressure metal organic vapor phase epitaxy (MOVPE). We improved the 2DEG characteristics of InAlAs/InP heterostructures by inserting an AlP interfacial layer between InAlAs and InP.<>