Quantum well intermixing using argon plasma generated in a reactive-ion etching system on InGaAs/InGaAsP laser structures

Abstract

Quantum-well intermixing using an argon plasma, generated by a reactive-ion etching system, is demonstrated on InGaAs/InGaAsP quantum well laser structures. The parameters of the process were optimised by using Taguchi's method. Using an argon flowrate of 50 sccm, pressure of 30 mTorr and RF power of 480 W, a blue shift of 73 nm was obtained after exposure to the plasma for 5 minutes.