Tunnel Injection into Gate Oxide Traps

13th International Reliability Physics Symposium Pub Date : 1900-01-01 DOI:10.1109/IRPS.1975.362672

J. Maserjian, R. Kaw, J. Collier

引用次数: 6

Abstract

An experimental method is described for measuring the density of oxide traps in the gate oxide of an MOS transistor as a function of energy and position near the silicon interface. Measurements are obtained from different oxide growth processes and after Co60 irradiation. The results are related to long-term drift of threshold voltage.

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闸式氧化物捕集器的隧道注入

本文描述了一种测量MOS晶体管栅极氧化物中氧化物阱密度与能量和靠近硅界面位置的函数关系的实验方法。测量结果来自不同的氧化物生长过程和Co60辐照后。结果与阈值电压的长期漂移有关。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

13th International Reliability Physics Symposium

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