Temperature Dependent Large-Signal Modeling of GaN HEMTs at Ka-Band using the ASM-HEMT

Abstract

This paper presents for the first time a temperature dependent ASM-HEMT model extracted from a gallium nitride (GaN) high electron mobility transistor (HEMT) validated with Ka-band on-wafer large-signal measurements. Modifications are made to the standard ASM-HEMT model to accurately model the DC, small-signal, and large-signal measurements collected as a function of ambient temperature. This work could shed light on the temperature dependence of GaN HEMTs and could enable the rapid design of high temperature integrated circuits.