{"title":"High-gain, polarization-independent semiconductor optical amplifier with a large optical cavity and angled buried facets","authors":"S. Tsuji, T. Toyonaka, M. Haneda, Y. Ono","doi":"10.1364/oaa.1990.pdp5","DOIUrl":null,"url":null,"abstract":"A polarization-insensitive semiconductor optical amplifier with angled buried facets has been fabricated. The TE and TM gains are equal to within 1.2-dB even including the additional effect from the gain ripple at 28-dB gain.","PeriodicalId":308628,"journal":{"name":"Optical Amplifiers and Their Applications","volume":"89 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical Amplifiers and Their Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/oaa.1990.pdp5","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A polarization-insensitive semiconductor optical amplifier with angled buried facets has been fabricated. The TE and TM gains are equal to within 1.2-dB even including the additional effect from the gain ripple at 28-dB gain.