A high-speed thin-film memory: its design and development

Abstract

Memories in today's high-performance systems are typically made up of memory modules of capacity comparable to the new memory to be described here. Cycle times are 500 nsec to 1 μsec with access times of 300 to 500 nsec. This paper presents the design of a thin-film main memory with a capacity of 8,192 words of 72 bits each. The cycle time of this memory is 120 nsec with an access time of 60 nsec. Thus, this memory design represents a 4-to-8-times improvement in main memory performance over the present state of the art.