Epitaxial growth and physics of nanostructures for quantum dot lasers

Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society Pub Date : 1996-11-18 DOI:10.1109/LEOS.1996.565260

Y. Arakawa

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Abstract

We succeeded in the first demonstration of a vertical microcavity quantum dot laser operated at 77K. The microcavity (/spl lambda/=985nm) consists of an InGaAs quantum dot layer grown by the S-K growth mode with MOCVD, located between two AlAs-Al/sub 0.2/Ga/sub 0.8/As distributed Bragg reflector mirrors.

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量子点激光器的外延生长和纳米结构物理

我们成功地首次演示了在77K下工作的垂直微腔量子点激光器。微腔(/spl lambda/=985nm)由一个采用MOCVD的S-K生长方式生长的InGaAs量子点层组成，位于两个ala - al /sub 0.2/Ga/sub 0.8/As分布布拉格反射镜之间。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society

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