A Neural Stimulator with 11.4 V Voltage-Compliance Realized in a $0.18-\mu\mathrm{m}$ 3.3 V CMOS Technology

Liwei Cao, Xiao Liu
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Abstract

A neural stimulator with a 11.4 V voltage compliance under a 12 V supply voltage has been proposed. The stimulator ASIC has been realized using only low-voltage transistors in a $0.18-\mu\mathrm{m}$ 3.3 V triple-well CMOS process with deep N-well. The proposed stimulator continuously senses the voltage at the stimulating electrode and adaptively adjusts the bias voltages to the gate of stacked transistors in the output branch, ensuring the voltage stress on each individual transistor are all within the safety limit. The stimulator supplies biphasic stimulus current with a maximum stimulus current of $100\ \mu\mathrm{A}$ and occupies 0.08 mm2 area. The proposed low-voltage transistor implementation of a high-voltage stimulator is especially suitable for multi-channel closed-loop neuroprosthetic devices where the stimulator can be integrated with other units which typically operate from low voltage supplies, such as recording amplifiers and signal processing units.
用$0.18-\mu\math {m}$ 3.3 V CMOS技术实现11.4 V电压顺应神经刺激器
提出了一种在12v电源电压下具有11.4 V电压顺应性的神经刺激器。在$0.18-\mu\ mathm {m}$ 3.3 V深n阱三孔CMOS工艺中,仅使用低压晶体管就实现了刺激器ASIC。该刺激器对刺激电极上的电压进行连续感知,并自适应调节输出支路上堆叠晶体管栅极的偏置电压,确保每个晶体管上的电压应力都在安全范围内。该刺激器提供双相刺激电流,最大刺激电流为$100\ \mu\mathrm{a}$,占地0.08 mm2。所提出的高压刺激器的低压晶体管实现特别适用于多通道闭环神经假肢装置,其中刺激器可以与通常由低压电源操作的其他单元集成,例如记录放大器和信号处理单元。
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