A K-band Monolithic Multifunctional Mixer with High Reliability under Fast Neutron Radiation

L. Zhang, Xu Cheng, Jiangan Han, Yue He, Kun Huang, W. Su
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引用次数: 1

Abstract

A highly integrated monolithic multifunctional mixer implemented by a 130nm GaAs mHEMT process is presented in this paper. With modified on-chip Marchand baluns, double balanced diode-ring mixer with direct intermediate frequency (IF) extraction is realized. Serving as a selector for transmitting or receiving modes, the IF single pole double throw (SPDT) switch with isolation better than 55dB is demonstrated. A coupler located at the local oscillator (LO) port was also integrated on the chip for power monitoring. Measured results exhibit 6.5-10dB up-conversion loss and 8.7-12dB down-conversion loss of the mixer over the radio frequency (RF) range of 18.5-26GHz. The RF-to-IF, LO-to-IF and LO-to-RF isolations are better than 20dB, 35dB and 45dB, respectively. What's more, effects of fast neutron radiation with fluences up to 1e14/cm2 on the chip's reliability was further studied. With no performance degradation, the fabricated multifunctional mixer is applicable to various wireless and communication systems in hostile environment.
快中子辐射下高可靠性的k波段单片多功能混频器
本文提出了一种采用130纳米GaAs mHEMT工艺实现的高集成度单片多功能混频器。采用改进的片上马尔尚平衡器,实现了直接中频提取的双平衡二极管环混频器。作为发送或接收模式的选择器,展示了隔离优于55dB的中频单极双掷(SPDT)开关。位于本地振荡器(LO)端口的耦合器也集成在芯片上用于电源监测。测量结果显示,在18.5-26GHz的射频(RF)范围内,混频器的上转换损耗为6.5-10dB,下转换损耗为8.7-12dB。RF-to-IF、LO-to-IF和LO-to-RF的隔离度分别优于20dB、35dB和45dB。进一步研究了快中子辐射影响达1e14/cm2对芯片可靠性的影响。制造的多功能混频器在不降低性能的情况下,适用于恶劣环境下的各种无线通信系统。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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