A numerical model for BJTs from liquid-nitrogen temperature to room temperature

Fan Jon Tseng, F. Ho
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引用次数: 0

Abstract

It has previously been reported that the Boltzmann statistics approximation as applied to MOSFETs at low-temperature yields a result very close to that of the approach following Fermi-Dirac statistics. However, by using the Boltzmann statistics approximation, results are obtained in less CPU-time than using Fermi-Dirac statistics. The present paper presents a simulation program for modeling the behavior of a bipolar junction transistor (BJT) operating under temperatures ranging from room temperature (300/spl deg/K) down to liquid nitrogen temperature (77/spl deg/K). Numerical methods for the simulation are outlined. The Boltzmann statistics approximation is applied in most of the cases. The simulation results of Boltzmann statistics are illustrated along with the case that assuming 100% ionization.
液氮温度至室温下bjt的数值模型
以前有报道说,将玻尔兹曼统计近似应用于低温下的mosfet产生的结果非常接近遵循费米-狄拉克统计的方法。然而,与使用费米-狄拉克统计相比,使用玻尔兹曼统计近似可以在更少的cpu时间内获得结果。本文提出了一个模拟程序,用于模拟双极结晶体管(BJT)在室温(300/spl度/K)到液氮温度(77/spl度/K)下工作的行为。概述了模拟的数值方法。在大多数情况下应用玻尔兹曼统计近似。给出了玻尔兹曼统计的模拟结果,并给出了假设电离率为100%的情况。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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