{"title":"A numerical model for BJTs from liquid-nitrogen temperature to room temperature","authors":"Fan Jon Tseng, F. Ho","doi":"10.1109/SECON.1995.513098","DOIUrl":null,"url":null,"abstract":"It has previously been reported that the Boltzmann statistics approximation as applied to MOSFETs at low-temperature yields a result very close to that of the approach following Fermi-Dirac statistics. However, by using the Boltzmann statistics approximation, results are obtained in less CPU-time than using Fermi-Dirac statistics. The present paper presents a simulation program for modeling the behavior of a bipolar junction transistor (BJT) operating under temperatures ranging from room temperature (300/spl deg/K) down to liquid nitrogen temperature (77/spl deg/K). Numerical methods for the simulation are outlined. The Boltzmann statistics approximation is applied in most of the cases. The simulation results of Boltzmann statistics are illustrated along with the case that assuming 100% ionization.","PeriodicalId":334874,"journal":{"name":"Proceedings IEEE Southeastcon '95. Visualize the Future","volume":"424 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings IEEE Southeastcon '95. Visualize the Future","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SECON.1995.513098","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
It has previously been reported that the Boltzmann statistics approximation as applied to MOSFETs at low-temperature yields a result very close to that of the approach following Fermi-Dirac statistics. However, by using the Boltzmann statistics approximation, results are obtained in less CPU-time than using Fermi-Dirac statistics. The present paper presents a simulation program for modeling the behavior of a bipolar junction transistor (BJT) operating under temperatures ranging from room temperature (300/spl deg/K) down to liquid nitrogen temperature (77/spl deg/K). Numerical methods for the simulation are outlined. The Boltzmann statistics approximation is applied in most of the cases. The simulation results of Boltzmann statistics are illustrated along with the case that assuming 100% ionization.