{"title":"Up-conversion mixer for PCS application using Si BJT","authors":"Daehan Kim, Sang-Gug Lee, Jin-Hyo Lee","doi":"10.1109/ICMMT.2000.895711","DOIUrl":null,"url":null,"abstract":"This paper analyzed three types of up-conversion mixer architectures for PCS applications using f/sub T/=25 GHz Si bipolar process. An optimum architecture that combines the mixer cell with an active balun is proposed. The balun provides high linearity and LO suppression. Simulation results shows conversion gain=0 dB, LO to RF leakage=24.8 dBm, output third-order intercept point (OIP/sub 3/)=9.6 dBm, and output 1 dB compression point (OP/sub 1 dB/)=-0.2 dBm, respectively, at f/sub RF/=1.9 GHz, f/sub IF/=100 MHz, 3 V supply voltage, and 24.6 mA current.","PeriodicalId":354225,"journal":{"name":"ICMMT 2000. 2000 2nd International Conference on Microwave and Millimeter Wave Technology Proceedings (Cat. No.00EX364)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"21","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICMMT 2000. 2000 2nd International Conference on Microwave and Millimeter Wave Technology Proceedings (Cat. No.00EX364)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMMT.2000.895711","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 21
Abstract
This paper analyzed three types of up-conversion mixer architectures for PCS applications using f/sub T/=25 GHz Si bipolar process. An optimum architecture that combines the mixer cell with an active balun is proposed. The balun provides high linearity and LO suppression. Simulation results shows conversion gain=0 dB, LO to RF leakage=24.8 dBm, output third-order intercept point (OIP/sub 3/)=9.6 dBm, and output 1 dB compression point (OP/sub 1 dB/)=-0.2 dBm, respectively, at f/sub RF/=1.9 GHz, f/sub IF/=100 MHz, 3 V supply voltage, and 24.6 mA current.