Bifacial heterojunction intrinsic thin layer solar cells as a bioFET supply

C. N. Karimah, P. R. Wigajatri, T. Abuzairi, N. R. Poespawati
{"title":"Bifacial heterojunction intrinsic thin layer solar cells as a bioFET supply","authors":"C. N. Karimah, P. R. Wigajatri, T. Abuzairi, N. R. Poespawati","doi":"10.1109/QIR.2017.8168454","DOIUrl":null,"url":null,"abstract":"Solar cells design as an independent supply for biosensor Field Effect Transistor (bioFET) is required to overcome electricity supply. Integrating bioFET with solar cells generates some benefits that include efficiency, low costs, and environmental friendly. In the design of solar cells, the bifacial structure of Hetero-junction Intrinsic Thin layer (HIT) was selected, and the optimization on the structure was carried out with the help of AFORS-HET software. The optimization of such a structure was undertaken by laying the intrinsic thin layers on both sides of the substrate or Transparent Conductive Oxides (TCO) that were placed on the front and back sides of the cell. In order to minimize the recombination, a back-surface field (BSF) was also put in the rear cell of the structure. Research on bifacial HIT structure needs to be done to select a solar cells structure that is most suitable with the voltage required by the bioFET. There are five structures modeling had done to have suitable structure using AFORS-HET. The entire five structures had been simulated on equilibrium mode, and they generally have shown to possess a band alignment type II, namely staggered heterojunction. The simulation results in equilibrium mode obtained one structure which the smallest ΔEC and ΔEV among the other four structures, that is TCO / a-Si:H(p) / a-Si:H(i) / c-Si(n) / a-Si:H(i) / a-Si:H(n<sup>+</sup>) / TCO / Al with ΔEC and ΔEV, 0.15006798 eV and 0.445920 eV respectively. This 2<sup>nd</sup> structure also has a smallest barrier in Φ<inf>Bn</inf>= 0.6791392 eV and Φ<inf>Bp</inf>= 0.08314 eV, respectively. The built-in potential of the 2<sup>nd</sup> structure is 1.13 V. This structure has J<inf>SC</inf>=0.083 A/cm<sup>2</sup> and V<inf>OC</inf> = 0.313 V. The deviation between built-in potential and V<inf>OC</inf> is realize in 0.817. The maximum current and maximum voltage are J<inf>m</inf> = 0,076 A/cm<sup>2</sup> and V<inf>m</inf> = 0,25 V respectively, so the maximum power of this structure is 0.019 Watt/cm<sup>2</sup>. Therefore the 2<sup>nd</sup> structure is the most appropriate structure to fulfill the bioFET supply.","PeriodicalId":225743,"journal":{"name":"2017 15th International Conference on Quality in Research (QiR) : International Symposium on Electrical and Computer Engineering","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 15th International Conference on Quality in Research (QiR) : International Symposium on Electrical and Computer Engineering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/QIR.2017.8168454","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Solar cells design as an independent supply for biosensor Field Effect Transistor (bioFET) is required to overcome electricity supply. Integrating bioFET with solar cells generates some benefits that include efficiency, low costs, and environmental friendly. In the design of solar cells, the bifacial structure of Hetero-junction Intrinsic Thin layer (HIT) was selected, and the optimization on the structure was carried out with the help of AFORS-HET software. The optimization of such a structure was undertaken by laying the intrinsic thin layers on both sides of the substrate or Transparent Conductive Oxides (TCO) that were placed on the front and back sides of the cell. In order to minimize the recombination, a back-surface field (BSF) was also put in the rear cell of the structure. Research on bifacial HIT structure needs to be done to select a solar cells structure that is most suitable with the voltage required by the bioFET. There are five structures modeling had done to have suitable structure using AFORS-HET. The entire five structures had been simulated on equilibrium mode, and they generally have shown to possess a band alignment type II, namely staggered heterojunction. The simulation results in equilibrium mode obtained one structure which the smallest ΔEC and ΔEV among the other four structures, that is TCO / a-Si:H(p) / a-Si:H(i) / c-Si(n) / a-Si:H(i) / a-Si:H(n+) / TCO / Al with ΔEC and ΔEV, 0.15006798 eV and 0.445920 eV respectively. This 2nd structure also has a smallest barrier in ΦBn= 0.6791392 eV and ΦBp= 0.08314 eV, respectively. The built-in potential of the 2nd structure is 1.13 V. This structure has JSC=0.083 A/cm2 and VOC = 0.313 V. The deviation between built-in potential and VOC is realize in 0.817. The maximum current and maximum voltage are Jm = 0,076 A/cm2 and Vm = 0,25 V respectively, so the maximum power of this structure is 0.019 Watt/cm2. Therefore the 2nd structure is the most appropriate structure to fulfill the bioFET supply.
双面异质结本征薄层太阳能电池作为生物晶体管电源
太阳能电池设计作为生物传感器场效应晶体管(bioFET)的独立电源是克服电力供应的必要条件。将生物ofet与太阳能电池相结合可以产生一些好处,包括效率高、成本低和环境友好。在太阳能电池的设计中,选择了异质结本质薄层(HIT)的双面结构,并利用AFORS-HET软件对其结构进行了优化。这种结构的优化是通过在衬底两侧铺设固有薄层或在电池的正面和背面放置透明导电氧化物(TCO)来进行的。为了最大限度地减少复合,在结构的后单元中还放置了一个背表面场(BSF)。为了选择一种最适合生物ofet所需电压的太阳能电池结构,需要对双面热电偶结构进行研究。利用AFORS-HET对5种结构进行了建模,得到了合适的结构。在平衡模式下对这五种结构进行了模拟,结果表明它们普遍具有带向II型,即交错异质结。平衡模式下的模拟结果得到了四种结构中最小的ΔEC和ΔEV,即TCO / a-Si:H(p) / a-Si:H(i) / c-Si(n) / a-Si:H(i) / a-Si:H(n+) / TCO / Al,分别为ΔEC和ΔEV, 0.15006798 eV和0.445920 eV。第二种结构的势垒最小,分别为ΦBn= 0.6791392 eV和ΦBp= 0.08314 eV。第二种结构的内置电位为1.13 V。该结构的JSC=0.083 A/cm2, VOC = 0.313 V。内置电位与VOC的偏差为0.817。最大电流Jm = 0.076 A/cm2,最大电压Vm = 0.25 V,因此该结构的最大功率为0.019 w /cm2。因此,第二种结构是最适合满足生物晶体管供应的结构。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信