A BJT-based SAR Temperature Sensor with a $5.12\ \text{pJ}\cdot \mathrm{K}^{2}$ Resolution FoM from −40 °C to 125 °C

Fuyue Qian, Xiaowei Zhang, Yanye Chen, Jianxiong Xi, Qinwei Zhu, Lenian He
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Abstract

This paper proposes a BJT-based temperature sensor with a 16-bit SAR ADC fabricated in a standard 55-nm CMOS process. Errors resulting from the front end are reduced by using chopping, dynamic element matching, and PTAT circuit compensation. It obtains a resolution of 0.04 °C and a resolution figure of merit (FoM) of $5.12\ \text{pJ}\cdot \mathrm{K}^{2}$ with the utilization of a 16-bit SAR ADC. The sensor takes 0.1 ms to complete a round of conversion. The switched-capacitor amplifier is applied to scale up the input range of the SAR ADC and improve the effective dynamic range. The sensor achieves an accuracy of ± 0.6 °C from −40 °C to 125 °C. It occupies an area of 0.234 mm2 and draws a current of $6.4\ \mu\mathrm{A}$ (analog front end) from a 1.2-V supply voltage.
基于bjt的SAR温度传感器,分辨率为$5.12\ \text{pJ}\cdot \ mathm {K}^{2}$,范围为−40°C至125°C
本文提出了一种基于bjt的温度传感器,并采用标准55纳米CMOS工艺制作了16位SAR ADC。采用斩波、动态元件匹配和PTAT电路补偿等方法减小了前端产生的误差。利用16位SAR ADC,获得了0.04°C的分辨率和5.12\ \text{pJ}\cdot \mathrm{K}^{2}$的分辨率值。传感器完成一轮转换需要0.1 ms。采用开关电容放大器放大SAR ADC的输入范围,提高有效动态范围。该传感器在- 40°C至125°C范围内的精度为±0.6°C。它占地面积为0.234 mm2,从1.2 v的电源电压中提取电流为$6.4\ \mu\mathrm{a}$(模拟前端)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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