An L-Band SiGe HBT Active Phase Shifter Based on Two-Stage Amplifier Designs with Resistor-Loaded LPF/HPF-Switching Interstage Networks

Y. Itoh
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Abstract

An L-band 4-bit SiGe HBT active phase shifter is presented. It is based on two-stage amplifier designs with resistor-loaded LPF/HPF-switching interstage networks. A phase shifting can be accomplished by varying the value of a bridging resistor and/or a characteristic resistance of the filter. The implemented active phase shifter has achieved a gain greater than 20dB, a gain error less than 1.8dB and a phase error less than 9 degrees at 0.8 GHz for all bits.
基于电阻负载LPF/ hpf交换级间网络两级放大器设计的l波段SiGe HBT有源移相器
提出了一种l波段4位SiGe HBT有源移相器。它基于两级放大器设计,具有负载电阻的LPF/ hpf交换级间网络。相移可以通过改变桥接电阻和/或滤波器的特性电阻的值来实现。所实现的有源移相器在0.8 GHz时实现了大于20dB的增益,小于1.8dB的增益误差和小于9度的相位误差。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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