Study on the Quantum Efficiency Enhancement in AlInN Nanowire Light-Emitting Diodes Grown by Molecular Beam Epitaxy

Abstract

We report on the demonstration of electron blocking layer free AlInN nanowire light-emitting diodes (LEDs) operating in the 280–365 nm wavelength region. The molecular beam epitaxial grown AlInN nanowires have a relatively high internal quantum efficiency of > 52%. Moreover, we show that the light extraction efficiency of the nanowires could reach ~ 63% for hexagonal photonic crystal nanowire structures which is significantly higher compared to that of the random nanowire arrays. This study provides significant insights into the design and fabrication of a new type of high-performance AlInN nanowire ultraviolet light-emitters.