Study the effect of nanoic indium oxide (In2O3) on electrical properties of ZnO- based varistor

Abstract

In this present work, we studied the influence of nanoic (In2O3) Doping of ZnO varistors’ electrical characteristics, I-V nonlinear coefficient, the leakage current, break down voltage and grain size, have been studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), electrical measurements, with different sintering temperatures (1000, 1050, 1100) °C for 2h. The results exhibit the nonlinear coefficient (α) gradually increased by increasing concentrations of (In2O3), Sintered varistor leakage current reduced with increased dopant concentration of nanoic (In2O3), the breakdown voltage values reduced with increased the sintering temperature. With the increasing (In2O3), The average grain size slightly reduced, which are improving the voltage gradient.In this present work, we studied the influence of nanoic (In2O3) Doping of ZnO varistors’ electrical characteristics, I-V nonlinear coefficient, the leakage current, break down voltage and grain size, have been studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), electrical measurements, with different sintering temperatures (1000, 1050, 1100) °C for 2h. The results exhibit the nonlinear coefficient (α) gradually increased by increasing concentrations of (In2O3), Sintered varistor leakage current reduced with increased dopant concentration of nanoic (In2O3), the breakdown voltage values reduced with increased the sintering temperature. With the increasing (In2O3), The average grain size slightly reduced, which are improving the voltage gradient.