A Weighted Sensing Scheme for ReRAM-Based Cross-Point Memory Array

Chenchen Liu, Hai Helen Li
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引用次数: 27

Abstract

In recent years, the design of cross-point array based on resistive random access memory (ReRAM) has been widely investigated because it offers extremely high storage density and low power consumption. However, the sneak-path leakage in such a resistive network is inevitable and grows fast as the array size increases, which severely constrains the scalability of cross-point array. This work proposes a novel weighted sensing scheme which suppresses the sneak-path leakage via precise voltage control of unselected memory cells. Furthermore, different weights are assigned to ReRAM cells, which can be read out at once using one single sensing component. The proposed weighted sensing scheme makes the implementation of large cross-point arrays possible meanwhile successfully reduces the area cost of peripheral circuitry. The effectiveness of the proposed design has been validated and studied via thorough circuit simulations.
一种基于reram的交叉点存储阵列加权感知方案
近年来,基于电阻随机存储器(ReRAM)的交叉点阵列的设计因其具有极高的存储密度和低功耗而受到广泛的研究。然而,在这种电阻网络中,随着阵列规模的增大,不可避免地会出现漏电现象,并且漏电现象的增长速度很快,严重制约了交叉点阵列的可扩展性。本文提出了一种新的加权传感方案,该方案通过对未选择的存储单元进行精确的电压控制来抑制隐路泄漏。此外,对ReRAM单元分配不同的权重,可以使用单个传感组件一次读出。所提出的加权传感方案使大型交叉点阵列的实现成为可能,同时成功地降低了外围电路的面积成本。通过全面的电路仿真验证和研究了所提出设计的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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