Bulk InP technologies: InP against GaAs

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 1994-03-27 DOI:10.1109/ICIPRM.1994.328244

K. Kohiro, K. Kainosho, R. Hirano, M. Uchida, S. Katsura, H. Kurita, T. Fukui, O. Oda

引用次数: 0

Abstract

Recently, the quality of InP bulk crystals has been greatly improved. In this paper, recent developments of InP crystal technologies are reviewed, including growth of large crystals, reduction of dislocation densities, preparation of undoped semi-insulating (SI) materials and polishing qualities. We also discuss the status of InP against GaAs from the viewpoints of substrate qualities and the production capability.<>

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批量InP技术:针对砷化镓的InP

近年来，铟磷块状晶体的质量有了很大的提高。本文综述了InP晶体技术的最新进展，包括大晶体的生长、位错密度的降低、未掺杂半绝缘材料的制备和抛光质量。我们还从衬底质量和生产能力的角度讨论了铟磷对抗砷化镓的现状。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)

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