Low noise, and high gain wideband amplifier using SiGe HBT technology

2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535) Pub Date : 2004-06-06 DOI:10.1109/MWSYM.2004.1335786

R. Chan, M. Feng

引用次数: 4

Abstract

A low noise wideband amplifier using SiGe HBT technology for the receiver system-on-a-chip application is reported. The fabricated amplifier chip has a gain of 15 dB across 22 GHz bandwidth, noise figure of 5 dB, and output third-order intermodulation product (OIP3) of 16.5 dBm, while dissipating a dc power of 72 mW for the operation. Measured high frequency, noise and linearity performances are compared with Cadence's Spectre's simulation with layout parasitics. Excellent agreement is observed for ultra-low power amplifier's measured and simulated results.

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采用SiGe HBT技术的低噪声、高增益宽带放大器

报道了一种采用SiGe HBT技术的低噪声宽带放大器，用于接收机片上系统。制作的放大器芯片在22 GHz带宽上的增益为15 dB，噪声系数为5 dB，输出三阶互调积(OIP3)为16.5 dBm，同时耗散72 mW的直流功率。并与Cadence's Spectre的布局寄生仿真进行了高频、噪声和线性性能的比较。超低功率放大器的测量结果与仿真结果非常吻合。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)

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