A differential resonant barometric pressure sensor using SOI-MEMS technology

Z. Luo, Deyong Chen, Junbo Wang, Jing Chen
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引用次数: 6

Abstract

This paper presents a resonant barometric pressure sensor based on SOI-MEMS technology. In this device, pressure under measurement causes a deflection of a pressure-sensitive silicon square diaphragm, which is further translated to stress build up in “H” type doubly-clamped micro beams, leading to resonant frequency shift. In device fabrication, SOI-MEMS fabrication processes were utilized, where a new modified buffered hydrofluoric acid (BHF) solution was used to remove the buried oxide layer and release the suspended resonant beams. Experimental results recorded a device resolution of 10Pa, with the nonlinearity of 0.03%, and the temperature coefficient of -0.04% F.S/°C in the range of -40°C to 30°C. The long-term stability error of the proposed device was quantified as 0.05% F.S over the past 3 months.
采用SOI-MEMS技术的差分谐振式气压传感器
提出了一种基于SOI-MEMS技术的谐振式气压传感器。在该装置中,测量压力引起压敏硅方形膜片的偏转,这进一步转化为“H”型双夹紧微梁中的应力积聚,导致谐振频率偏移。在器件制造中,利用SOI-MEMS制造工艺,使用一种新型改性缓冲氢氟酸(BHF)溶液去除埋在其中的氧化层并释放悬浮谐振光束。实验结果显示,器件分辨率为10Pa,非线性为0.03%,温度系数为-0.04% F.S/°C,温度范围为-40℃~ 30℃。该装置在过去3个月内的长期稳定性误差被量化为0.05% F.S。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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