An efficiency comparison between a 18 pulses diode rectifier and a multi-cell AFE rectifier operating with FCS — MPC

E. Espinosa, J. Espinoza, J. Rohten, Roberto O. Ramírez, M. Reyes, J. Muñoz, P. Melín
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引用次数: 8

Abstract

Multilevel converters are widely used in medium voltage applications. One of the most popular topologies in this field is the 18 pulses diode rectifier, which uses a muItipuIse transformer that realizes a current harmonics cancelation that are generated by the three phase diode rectifiers. In this work an efficiency comparison of the aforementioned topology and a Multi-Cell Active-Front-End (AFE) Rectifier operating with Finite Control Set - Model Predictive Control is performed. This efficiency comparison is focused on the rectifier losses divided into two types. The first one is the semiconductors switching and conduction losses. The second one evaluates the transformer losses, which are studied under two criteria: copper losses (Standard IEEE C57.10-1998) and the K - Factor (Standard IEEE / ANSI C57.110). The results show that the diode based rectifier topology has lower semiconductors losses, while the topology based on AFE rectifiers has lower transformers losses and a less complex design. Indeed, a reduction of a 7.2% in copper losses is achieved in the transformer secondary with respect to a multi-pulse transformer secondary.
18脉冲二极管整流器与使用FCS - MPC的多单元AFE整流器的效率比较
多电平变换器广泛应用于中压领域。该领域最流行的拓扑结构之一是18脉冲二极管整流器,它使用一个多路变压器来实现由三相二极管整流器产生的电流谐波抵消。在这项工作中,对上述拓扑结构和有限控制集模型预测控制下的多单元有源前端(AFE)整流器进行了效率比较。本次效率比较的重点是将整流器的损耗分为两类。第一个是半导体的开关和传导损耗。第二部分对变压器的损耗进行了评估,采用了铜损耗(标准IEEE C57.10-1998)和K因子(标准IEEE / ANSI C57.110)两个标准进行了研究。结果表明,基于二极管的整流器拓扑结构具有较低的半导体损耗,而基于AFE整流器的拓扑结构具有较低的变压器损耗和较简单的设计。实际上,相对于多脉冲变压器二次,在变压器二次中铜损耗降低了7.2%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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