SOI thin film fully depleted high performance devices

Abstract

Summary form only given. SOI devices fall into two categories: thick-film partially depleted (PD) MOSFETs and thin-film fully depleted (FD) MOSFETs. The basic operation differences between PD and FD MOSFETs have been explored with the aid of two-dimensional numerical modeling. It is found from both modeling and experimental data that FD MOSFETs offer a significant reduction in the two-dimensional short-channel effects and the kink effect found in the PD MOSFETs. The salient design features of the FD MOSFETs are described. CMOS MOSFETs fabricated with gate lengths as short as 400 nm exhibit very good saturation characteristics with electron mobilities of approximately 550 cm/sup 2//V-s. Ring oscillators with gate lengths of 1.2 mu m have shown inverter stage delays of 65 ps. These ring oscillators also show very well-behaved capacitive coupling to the underlying bulk substrate.<>