SNAP: Selective NTV Heterogeneous Architectures for Power-Efficient Edge Computing

R. Tonetto, A. C. S. Beck, G. Nazar
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Abstract

While there is a growing need to process ML inference on the edge for improved latency and extra security, general-purpose solutions alone cannot cope with the increasing performance demand under power restrictions. Considering that systolic arrays are a prominent, but also power-hungry solution, we propose a methodology to enable their use in edge devices. For that, we propose SNAP, a selective Near-Threshold Voltage (NTV) strategy to explore heterogeneous MPSoCs with two voltage islands, one at NTV, and another at nominal voltage. By adopting a dynamic programming approach, SNAP may selectively apply NTV to the systolic array and to an optimal subset of cores in RISC- V-based MPSoCs, enabling ML acceleration on the edge. Combined with a smart application mapping, the strategy increases performance by up to 18.9 % over a nominal design within the same power limits.
SNAP:用于高能效边缘计算的选择性NTV异构架构
虽然越来越需要在边缘处理ML推理以改善延迟和额外的安全性,但仅靠通用解决方案无法在功率限制下应对不断增长的性能需求。考虑到收缩阵列是一个突出的,但也是耗电的解决方案,我们提出了一种方法,使其能够在边缘设备中使用。为此,我们提出了SNAP,一种选择性近阈值电压(NTV)策略,用于探索具有两个电压岛的异构mpsoc,一个在NTV,另一个在标称电压。通过采用动态规划方法,SNAP可以选择性地将NTV应用于收缩阵列和基于RISC- v的mpsoc的最佳内核子集,从而在边缘实现ML加速。与智能应用映射相结合,该策略在相同功率限制下,比标称设计的性能提高了18.9%。
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