A low-voltage power MOSFET with a fast-recovery body diode for synchronous rectification

21st Annual IEEE Conference on Power Electronics Specialists Pub Date : 1990-06-11 DOI:10.1109/PESC.1990.131177

G. E. Rittenhouse, M. Schlecht

引用次数: 8

Abstract

A power MOSFET suitable for synchronous rectification in 1-10 MHz switching power supplies is presented. Three device structures are compared to find the lowest on-state resistance, off-state capacitance product. The lightly doped drain region typical of most power MOSFETs is removed to give a body diode with a 1 ns reverse recovery time. Both of these types are needed for efficient operation at high frequencies. Process details and experimental results are also discussed.<>

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具有用于同步整流的快速恢复体二极管的低压功率MOSFET

提出了一种适用于1- 10mhz开关电源同步整流的功率MOSFET。通过对三种器件结构的比较，找出最低的通状态电阻、关状态电容积。大多数功率mosfet典型的轻掺杂漏极区域被去除，以获得具有1ns反向恢复时间的体二极管。这两种类型都需要在高频率下有效运行。并讨论了工艺细节和实验结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

21st Annual IEEE Conference on Power Electronics Specialists

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